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1

Dynamic avalanche and reliability of high voltage diodes

Josef Lutz, Martin Domeij

Journal:

Microelectronics Reliability

Year:

2003

Language:

english

File:

PDF, 224 KB

english, 2003

2

High Voltage, Low On-Resistance 4H-SiC BJTs with Improved Junction Termination Extension

Ghandi, Reza, Buono, Benedetto, Domeij, Martin, Zetterling, Carl Mikael, Östling, Mikael

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 382 KB

english, 2011

3

[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Avalanche rugged 1200 V 80 m Ω SiC MOSFETs with state-of-the-art threshold voltage stability

Domeij, Martin, Franchi, Jimmy, Buono, Benedetto, Lee, Kwangwon, Park, K.-S., Choi, C.-S., Sunkari, Swapna, Das, Hrishikesh

Year:

2018

Language:

english

File:

PDF, 1.30 MB

english, 2018

4

Dynamic avalanche in Si power diodes and impact ionization at the nn+ junction

Martin Domeij, Bo Breitholtz, Josef Lutz, Mikael Östling

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 472 KB

english, 2000

5

Stable dynamic avalanche in Si power diodes

Domeij, Martin, Breitholtz, Bo, Östling, Mikael, Lutz, Josef

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 329 KB

english, 1999

6

[IEEE 19th International Symposium on Power Semiconductor Devices and IC's - Jeju, Korea (2007.05.27-2007.05.31)] Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's - Influence of the base contact on the electrical characteristics of SiC BJTs

Lee, Hyung-Seok, Domeij, Martin, Zetterling, Carl-Mikael, Ostling, Mikael, Heinze, Birk, Lutz, Josef

Year:

2007

Language:

english

File:

PDF, 2.56 MB

english, 2007

7

Extrinsic Base Design of SiC Bipolar Transistors

Danielsson, Erik, Domeij, Martin, Zetterling, C.M., Östling, Mikael, Schöner, Adolf

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 294 KB

english, 2004

8

1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance

Lee, Hyung Seok, Domeij, Martin, Zetterling, C.M., Ghandi, R., Östling, Mikael, Allerstam, Fredrik, Sveinbjörnsson, Einar Ö.

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 429 KB

english, 2009

9

Current Gain of 4H-SiC Bipolar Transistors Including the Effect of Interface States

Domeij, Martin, Danielsson, Erik, Lee, Hyung Seok, Zetterling, C.M., Östling, Mikael

Journal:

Materials Science Forum

Year:

2005

Language:

english

File:

PDF, 230 KB

english, 2005

10

[IEEE 2017 IEEE Applied Power Electronics Conference and Exposition (APEC) - Tampa, FL, USA (2017.3.26-2017.3.30)] 2017 IEEE Applied Power Electronics Conference and Exposition (APEC) - A physically based scalable SPICE model for silicon carbide power MOSFETs

He, Canzhong, Victory, James, Yazdi, Mehrdad Baghaie, Lee, Kwangwon, Domeij, Martin, Allerstam, Fredrik, Neyer, Thomas

Year:

2017

Language:

english

File:

PDF, 3.53 MB

english, 2017

11

TCAD Modeling of a 1200 V SiC MOSFET

Lee, K., Buono, Benedetto, Domeij, Martin, Franchi, Jimmy

Journal:

Materials Science Forum

Year:

2018

Language:

english

File:

PDF, 2.52 MB

english, 2018

12

1200 V SiC MOSFETs with Stable VTH under High Temperature Gate Bias Stress

Franchi, Jimmy, Domeij, Martin, Lee, Kwang Won

Journal:

Materials Science Forum

Year:

2019

File:

PDF, 439 KB

2019

13

Effect of Phosphorus Doped Poly Annealing on Threshold Voltage Stability and Thermal Oxide Reliability in 4H-SiC MOSFET

Lee, Kwangwon, Seo, Young Ho, Lee, Taeseop, Park, Kyeong Seok, Domeij, Martin, Allerstam, Fredrik, Neyer, Thomas

Journal:

Materials Science Forum

Year:

2020

File:

PDF, 474 KB

2020

14

Space and time resolved surface temperature distributions in Si power diodes operating under self-heating conditions

Leonardo M Hillkirk, Bo Breitholtz, Martin Domeij

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 1.05 MB

english, 2001

15

POPULATION AGING AND INTERNATIONAL CAPITAL FLOWS

David Domeij, Martin Flodén

Journal:

International Economic Review

Year:

2006

Language:

english

File:

PDF, 331 KB

english, 2006

16

The labor-supply elasticity and borrowing constraints: Why estimates are biased

David Domeij, Martin Flodén

Journal:

Review of Economic Dynamics

Year:

2006

Language:

english

File:

PDF, 195 KB

english, 2006

17

Inequality trends in Sweden 1978–2004

David Domeij, Martin Flodén

Journal:

Review of Economic Dynamics

Year:

2010

Language:

english

File:

PDF, 900 KB

english, 2010

18

High Current-Gain Implantation-Free 4H-SiC Monolithic Darlington Transistor

Ghandi, Reza, Buono, Benedetto, Domeij, Martin, Ostling, Mikael

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 197 KB

english, 2011

19

[IEEE 2006 European Conference on Web Services (ECOWS'06) - Zurich, Switzerland (2006.12.4-2006.12.6)] 2006 European Conference on Web Services (ECOWS'06) - A Value-Based Foundation for Service Modelling

Henkel, Martin, Perjons, Erik, Zdravkovic, Jelena, Domeij, Christer, Appehl, Gunnar

Year:

2006

Language:

english

File:

PDF, 316 KB

english, 2006

20

[IEEE 2011 IEEE Applied Power Electronics Conference and Exposition - APEC 2011 - Fort Worth, TX, USA (2011.03.6-2011.03.11)] 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC) - Degradation free fast switching 1200 V 50 a silicon carbide BJT's

Lindgren, Anders, Domeij, Martin

Year:

2011

Language:

english

File:

PDF, 1.40 MB

english, 2011

21

[IEEE 2007 European Conference on Power Electronics and Applications - Aalborg, Denmark (2007.09.2-2007.09.5)] 2007 European Conference on Power Electronics and Applications - Analysis of the base current and saturation voltage in 4H-SiC power BJTs

Domeij, Martin, Lee, Hyung-Seok, Zetterling, Carl-Mikael, Ostling, Mikael

Year:

2007

Language:

english

File:

PDF, 407 KB

english, 2007

22

Low-Temperature Annealing of Radiation-Induced Degradation in 4H-SiC Bipolar Junction Transistors

Hallén, Anders, Nawaz, Muhammad, Zaring, Carina, Usman, Muhammad, Domeij, Martin, Östling, Mikael

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 268 KB

english, 2010

23

Investigation of TiW Contacts to 4H-SiC Bipolar Junction Devices

Lee, Hyung Seok, Domeij, Martin, Zetterling, C.M., Östling, Mikael, Lu, Jun

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 1.79 MB

english, 2006

24

Measurement and Device Simulation of Avalanche Breakdown in High-Voltage 4H-SiC Diodes Including the Influence of Macroscopic Defects

Domeij, Martin, Brünahl, H., Östling, Mikael

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 370 KB

2002

25

Operation of Silicon Carbide BJTs Free from Bipolar Degradation

Konstantinov, Andrei O., Domeij, Martin, Zaring, Carina, Keri, Imre, Svedberg, Jan Olov, Gumaelius, Krister, Östling, Mikael, Reimark, Mats

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 819 KB

english, 2010

26

Investigation of Current Gain Degradation in 4H-SiC Power BJTs

Buono, Benedetto, Ghandi, Reza, Domeij, Martin, Malm, B. Gunnar, Zetterling, Carl Mikael, Östling, Mikael

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 358 KB

english, 2012

27

Experimental Evaluation of Different Passivation Layers on the Performance of 3kV 4H-SiC BJTs

Ghandi, Reza, Domeij, Martin, Esteve, Romain, Buono, Benedetto, Schöner, Adolf, Han, Ji Sheng, Dimitrijev, Sima, Reshanov, Sergey A., Zetterling, Carl Mikael, Östling, Mikael

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 320 KB

english, 2010

28

Simulation Study of 4H-SiC Junction-Gated MOSFETs from 300 K to 773 K

Lee, Hyung Seok, Koo, Sang-Mo, Zetterling, C.M., Danielsson, Erik, Domeij, Martin, Östling, Mikael

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 176 KB

english, 2004

29

A Comparative Study of Surface Passivation on SiC BJTs with High Current Gain

Lee, Hyung Seok, Domeij, Martin, Zetterling, C.M., Östling, Mikael, Sveinbjörnsson, Einar Ö.

Journal:

Materials Science Forum

Year:

2007

Language:

english

File:

PDF, 395 KB

english, 2007

30

Large Area 1200 V SiC BJTs with β>100 and ρON

Domeij, Martin, Konstantinov, Andrei, Lindgren, Anders, Zaring, Carina, Gumaelius, Krister, Reimark, Mats

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 393 KB

english, 2012

31

Current Gain Dependence on Emitter Width in 4H-SiC BJTs

Domeij, Martin, Lee, Hyung Seok, Zetterling, C.M., Östling, Mikael, Schöner, Adolf

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 276 KB

english, 2006

32

Backside Nickel Based Ohmic Contacts to n-Type Silicon Carbide

Ghandi, R., Lee, Hyung Seok, Domeij, Martin, Zetterling, C.M., Östling, Mikael

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 336 KB

english, 2009

33

Assessment of High and Low Temperature Performance of SiC BJTs

Nawaz, Muhammad, Zaring, C., Bource, J., Schupbach, Marcelo, Domeij, Martin, Lee, H.S., Östling, Mikael

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 930 KB

english, 2009

34

2.2 kV SiC BJTs with Low VCESAT Fast Switching and Short-Circuit Capability

Domeij, Martin, Zaring, Carina, Konstantinov, Andrei O., Nawaz, Muhammad, Svedberg, Jan Olov, Gumaelius, Krister, Keri, Imre, Lindgren, Anders, Hammarlund, Bo, Östling, Mikael, Reimark, Mats

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 334 KB

english, 2010

35

A 4H-SiC BJT with an Epitaxially Regrown Extrinsic Base Layer

Danielsson, Erik, Domeij, Martin, Lee, Hyung Seok, Zetterling, C.M., Östling, Mikael, Schöner, Adolf, Hallin, Christer

Journal:

Materials Science Forum

Year:

2005

Language:

english

File:

PDF, 194 KB

english, 2005

36

Temperature Modeling and Characterization of the Current Gain in 4H-SiC Power BJTs

Buono, Benedetto, Ghandi, Reza, Domeij, Martin, Malm, Gunnar, Zetterling, Carl Mikael, Östling, Mikael

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 383 KB

english, 2010

37

SiC Bipolar Power Transistors - Design and Technology Issues for Ultimate Performance

Ostling, Mikael, Domeij, Martin, Zaring, Carina, Konstantinov, Andreij, Ghandi, Reza, Buono, Benedetto, Hallen, Anders, Zetterling, Carl-Mikael

Journal:

MRS Proceedings

Year:

2010

Language:

english

File:

PDF, 442 KB

english, 2010

38

Simulations of High-Voltage 4H-SiC p+nn+ Diodes Using a Transient Model for the Deep Boron Level

Domeij, Martin, Zimmermann, Uwe, Åberg, D., Österman, John, Hallén, Anders, Östling, Mikael

Journal:

Materials Science Forum

Year:

2003

Language:

english

File:

PDF, 283 KB

english, 2003

39

A Simple and Reliable Electrical Method for Measuring the Junction Temperature and Thermal Resistance of 4H-SiC Power Bipolar Junction Transistors

Eriksson, K.G.P., Domeij, Martin, Lee, Hyung Seok, Zetterling, C.M., Östling, Mikael

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 265 KB

english, 2009

40

Comparison between Implanted and Epitaxial PiN-Diodes on 4H-Silicon Carbide

Zimmermann, Uwe, Domeij, Martin, Hallén, Anders, Östling, Mikael

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 478 KB

english, 2004

41

Reverse Recovery and Avalanche Injection in High Voltage SiC PIN Diodes

Domeij, Martin, Breitholtz, Bo, Linnros, Jan, Östling, Mikael

Journal:

Materials Science Forum

Year:

1998

File:

PDF, 393 KB

1998

42

Electrical Characteristics of 4H-SiC BJTs at Elevated Temperatures

Lee, Hyung Seok, Domeij, Martin, Danielsson, Erik, Zetterling, C.M., Östling, Mikael

Journal:

Materials Science Forum

Year:

2005

Language:

english

File:

PDF, 539 KB

english, 2005

43

Dynamic Avalanche and Trapped Charge in 4H-SiC Diodes

Domeij, Martin, Breitholtz, Bo, Liberski, P., Martinez, A., Bergman, J. Peder

Journal:

Materials Science Forum

Year:

2000

File:

PDF, 362 KB

2000

44

Simulation and Measurement of Switching Characteristics of 4H-SiC Buried-Gate JFETs

Koo, Sang-Mo, Domeij, Martin, Zetterling, C.M., Östling, Mikael, Forsberg, Urban, Janzén, Erik

Journal:

Materials Science Forum

Year:

2003

File:

PDF, 270 KB

2003

45

4H-SiC Power BJTs with High Current Gain and Low On-Resistance

Lee, Hyung Seok, Domeij, Martin, Zetterling, C.M., Östling, Mikael

Journal:

Materials Science Forum

Year:

2007

Language:

english

File:

PDF, 435 KB

english, 2007

46

Simulations of Open Emitter Breakdown Voltage in SiC BJTs with Non Implanted JTE

Buono, B., Lee, Hyung Seok, Domeij, Martin, Zetterling, C.M., Östling, Mikael

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 1.30 MB

english, 2009

47

Experimental Study of Degradation in 4H-SiC BJTs by Means of Electrical Characterization and Electroluminescence

Farese, Luca, Malm, Gunnar, Domeij, Martin, Östling, Mikael

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 507 KB

english, 2010

48

Implantation-Free Low On-Resistance 4H-SiC BJTs with Common-Emitter Current Gain of 50 and High Blocking Capability

Ghandi, R., Lee, Hyung Seok, Domeij, Martin, Buono, B., Zetterling, C.M., Östling, Mikael

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 400 KB

english, 2009

49

Stability of Current Gain in SiC BJTs

Buono, Benedetto, Allerstam, Fredrik, Domeij, Martin, Konstantinov, Andrei, Gumaelius, Krister, Das, Hrishikesh, Neyer, Thomas

Journal:

Materials Science Forum

Year:

2014

Language:

english

File:

PDF, 661 KB

english, 2014

50

Current Gain Degradation in 4H-SiC Power BJTs

Buono, Benedetto, Ghandi, Reza, Domeij, Martin, Malm, Gunnar, Zetterling, Carl Mikael, Östling, Mikael

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.17 MB

english, 2011